Physics of Nanosystems

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54.) W. G. Reis, Ž. Tomović, R. T. Weitz, R. Krupke, and J. Mikhael, "Wide dynamic range enrichment method of semiconducting single-walled carbon nanotubes with weak field centrifugation", Scientific Reports, 7, 44812 (2017) (article online)

53.) N.-E. Weber, A. Binder, M. Kettner, S. Hirth. R.T. Weitz, and Z. Tomovic, "Metal-Free Synthesis of Nanocrystalline Graphene on Insulating Substrates by Carbon Dioxide-Assisted Chemical Vapor Deposition", Carbon, 112, 201 (2017) (article online)



52.) W. G. Reis, R. T. Weitz, M. Kettner, A. Kraus, M. G. Schwab, Ž. Tomović, R. Krupke, and J. Mikhael, "Highly Efficient and Scalable Separation of Semiconducting Carbon Nanotubes via Weak Field Centrifugation", Scientific Reports, 6, 26259 (2016) (article online)

51.) L. Shaw, P. Hayoz, Y. Diao, J. A. Reinspach, J. W. F. To, M. F. Toney, R. T. Weitz, and Z. Bao, "Direct Uniaxial Alignment of a Donor-Acceptor Semiconducting Polymer using Single-Step Solution Shearing", ACS Appl. Mater. Interfaces, 8, 9285, (2016) (article online)

50.) S. Müller, R.-P. Baumann, T. Gessner, and R. T. Weitz, "Identification of grain boundaries as degradation site in n-channel Organic Field-Effect Transistors Identified via Conductive Atomic Force Microscopy", Physica Status Solidi - Rapid Research Letters, 10, 339, (2016) (artlicle online) (Back cover)

49.) K. M. Schelkle, M. Bender, S. Beck, K. F. Jeltsch, S. Stolz, J. Zimmermann, R. T. Weitz, A. Pucci, K. Müllen, M. Hamburger, and U. H. F. Bunz, „Photo-Cross-Linkable Polymeric Optoelectronics Based on the [2+2] Cycloaddition Reaction of Cinnamic Acid”, Macromolecules, 49, 1518, (2016) (article online)

48.) Z. Yuan, Y. Ma, T. Geßner, M. Li, L. Chen, M. Eustachi, R. T. Weitz, C. Li, and K. Müllen, "Core-Fluorinated Naphthalene Diimides: Synthesis, Characterization, and Application in n-Type Organic Field-Effect Transistors", Org. Lett., 18, 456, (2016) (article online)

47.) G.E. Purdum, N. Yao, A. Woll, T. Gessner, R.T. Weitz, and Y.-L. Loo, "Understanding Polymorph Transformations in Core-Chlorinated Naphthalene Diimides and their Impact on Thin-Film Transistor Performance", Adv. Fun. Mat. , 26, 2395, (2016) (article online) (Inside back cover)

46.) T. Lei, G. Pitner, X. Chen, G. Hong, S. Park, P. Hayoz, R.T. Weitz, H.-S.P. Wong, and Z. Bao, "Dispersion of High-Purity Semiconducting Arc-Discharged Carbon Nanotubes Using Backbone Engineered Diketopyrrolopyrrole (DPP)-Based Polymers", Advanced Electronic Materials, 2, 1500299, (2016) (article online)



45.) U. Zschieschang, K. Amsharov, M. Jansen, K. Kern, H. Klauk, and R.T. Weitz, “Separating the Impact of Oxygen and Water on the Stability of n-channel Perylene Diimide Field-Effect Transistors”, Organic Electronics 26, 340, (2015) (article online)

44.) K.F. Jeltsch, G. Lupa, and R.T. Weitz ”Materials Depth Distribution and Degradation of a FIrpic Based Solution-Processed Blue OLED”, Organic Electronics 26, 365, (2015) (article online)

43.) M. Aghamohammadi, R. Roedel, U. Zschieschang, C. Ocal, H. Boschker, R.T. Weitz, E. Barrena, and H. Klauk, "Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects", ACS Appl. Mat. Int. 7, 22775, (2015) (article online)

42.) I. Vladimirov, C. Chow, A.J. Strudwick, M.G. Schwab, D. Kälblein, and R.T. Weitz, “Bulk Transport and Contact Limitation of MoS2 Multilayer Flake Transistors Untangled via Temperature- and Bias-Dependent Transport Measurements”, phys. stat. sol (a) 212, 2059, (2015) (article online)

41.) M. Strecker, J. Brill, S. Köhler, R.T. Weitz, and N. Frühauf, „Understanding Organic Thin-Film Transistor Fabrication based on Application-Relevant Deposition and Patterning Techniques“, phys. stat. sol (a) 212, 1634 (2015) (article online)

40.) M. Kettner, A.J. Strudwick, M.G. Schwab, R.T. Weitz, "Ionic gel as gate dielectric for the easy characterization of graphene and polymer field-effect transistors and electrochemical resistance modification of graphene", J. Appl. Phys. 118, 025501 (2015) (article online)

39.) T. Lei, Y.C. Lai, G.S. Hong, H.L. Wang, P. Hayoz, R.T. Weitz, C.X. Chen, H.J. Dai, Z.N. Bao, "Diketopyrrolopyrrole (DPP)-Based Donor-Acceptor Polymers for Selective Dispersion of Large-Diameter Semiconducting Carbon Nanotubes", Small 11, 24 (2015) (article online)

38.) U. Zschieschang, H. Klauk, I.B. Müller, A.J. Strudwick, T. Hintermann, M.G. Schwab, A. Narita, X. Feng. K. Müllen, and R.T. Weitz, “Electrical Characteristics of Field-Effect Transistors based on Individual Chemically Synthesized Graphene Nanoribbons”, Advanced Electronic Materials 1, 1400010 (2015) (article online)

36.) A. Strudwick, N. Weber, M.G. Schwab, M. Kettner, R.T. Weitz, J. Wünsch, K. Müllen, and H. Sachdev, „Chemical Vapor Deposition of High Quality Graphene Films from Carbon Dioxide Atmospheres“, ACS Nano 9, 31 (2015) (article online)


34.) Y. Xu, I. Hennig, D. Freyberg, A.J. Strudwick, M.G. Schwab, T. Weitz and K.C-P. Cha, “Inkjet-printed energy storage device using graphene/polyaniline inks”, J. Power Sources 248, 483 (2014) (article online)

35.) M. Strecker, D. Gavranic, J. Remmele, N. Frühauf, R.T. Weitz, and J. Brill, „Encapsulation of Printed Organic Thin-Film Transistors Using a Photo-Patternable Resist Based on Orthogonal Solvents“, Proc. of the Flexible & Printed Electronics Conference, Arizona (2014)



33.) D. S. Lee , V. Skákalová, R.T. Weitz, K. von Klitzing, and J.H. Smet, “Capturing Quantum Hall Localization from Conductance Fluctuations”, Phys. Rev. Lett. 109, 056602 (2012) (article online)

32.) S. Rauschenbach, G. Rinke, N. Malinowski, R.T. Weitz, R. Dinnebier, N. Thontasen, Z. Deng, T. Lutz, P.M. de Almeida Rollo, G. Costantini, L. Harnau, K. Kern, “Crystalline Inverted Membranes Grown on Surfaces by Electrospray Ion Beam Deposition in Vacuum”, Advanced Materials 24, 2761 (2012) (article online)


31.) D. Kälblein, R.T. Weitz, H.J. Böttcher, F. Ante, U. Zschieschang, K. Kern, and H. Klauk, „Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric”, Nano Letters 11, 5309 (2011) (article online)


30.) R.T. Weitz, and A. Yacoby, “Graphene Rests Easy”, Nature Nanotechnology News&Views 5, 699 (2010) (article online)

29.) H. Ryu, D. Kaelblein, R.T. Weitz, F. Ante, U. Zschieschang, K. Kern, O.G. Schmidt, and H. Klauk, “Logic Circuits Based on Individual Semiconducting and Metallic Carbon-nanotube Devices”, Nanotechnology 21, 475295 (2010) (article online)

28.) I. Gierz, T. Suzuki, R.T. Weitz, D. S. Lee, B. Krauss, C. Riedl, U. Starke, H. Höchst, J. H. Smet, C. R. Ast, and K. Kern, “Electronic Decoupling of an Epitaxial Graphene Monolayer by Gold Intercalation”, Phys. Rev. B 81, 235408 (2010) (Editor’s suggestion) (article online)

27.) N. Fu, Z. Li, A. Myalitsin, M. Scolari, R.T. Weitz, M. Burghard, and A. Mews, “One-Dimensional Heterostructures of Single-Walled Carbon Nanotubes and CdSe Nanowires”, Small 6, 376 (2010) (article online)

26.) J. Martin, B.E. Feldman, R.T. Weitz, M.T. Allen, and A. Yacoby, “Local Compressibility Measurements of Correlated States in Suspended Bilayer Graphene”, Phys. Rev. Lett. 105, 256806 (2010) (Editor’s suggestion and selected for a synopsis in Physics) (article online)

25.) R.T. Weitz, M.T. Allen, B.E. Feldman, J. Martin, and A. Yacoby, “Broken-Symmetry States in Doubly Gated Suspended Bilayer Graphene”, Science 330, 812 (2010) (article online)


24.) R.T. Weitz, K. Amsharov, U. Zschieschang, M. Burghard, M. Jansen, M. Kelsch, B. Rhamtai, P.A. van Aken, K. Kern, and H. Klauk, “The Importance of Grain Boundaries for the Time-Dependent Mobility Degradation in Organic Thin-Film Transistors”, Chem. Mater. 21, 4949 (2009) (article online)

23.) R.T. Weitz, U. Zschieschang, A. Forment-Aliaga, D. Kälblein, M. Burghard, K. Kern, and H. Klauk, „Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric”, Nano Letters 9, 1335 (2009) (article online)

22.) D. Kaelblein, H.J. Boettcher, R.T. Weitz, U. Zschieschang, K. Kern, and H. Klauk, “Integrated Circuits using Top-Gate ZnO Nanowire Transistors with Ultrathin Organic Gate Dielectric”, IEDM 2009, DOI:10.1109/IEDM.2009.5424286

21.) U. Zschieschang, K. Amsharov, R.T. Weitz, M. Jansen, and H. Klauk, „Low-voltage Organic n-Channel Thin-film Transistors Based on a Core-cyanated Perylene Tetracarboxylic Diimide Derivative”, Synth. Met. 159, 2362 (2009) (article online)

20.) P. Atanasova, R.T. Weitz, P. Gerstel, V. Srot, P. Kopold, P.A. van Aken, M. Burghard, and J. Bill, “DNA-Templated Synthesis of ZnO Thin Layers and Nanowires”, Nanotechnology 20, 365302 (2009) (article online)

19.) F. Ante, U. Zschieschang, R.T. Weitz, D. Kaelblein, K. Kern, H. Klauk, “Low-voltage Metal-Gate Top-contact Organic Thin-film Transistors and Complementary Inverters with Submicron Channel Length” DRC 2009, page 179, DOI:10.1109/DRC.2009.5354939

18.) D. Kaelblein, H.J. Boettcher, R.T. Weitz, U. Zschieschang, K. Kern, and H. Klauk, “Top-gate ZnO Nanowire Transistors with Ultrathin Organic Gate Dielectric”, DRC 2009, page 17, DOI:10.1109/DRC.2009.5354946

17.) J. Dorfmueller, R. Vogelgesang, R.T. Weitz, C. Rockstuhl, C. Etrich, T. Pertsch, F. Lederer, and K. Kern, “Fabry-Perot Resonances in One-Dimensional Plasmonic Nanostructures”, Nano Letters 9, 2372 (2009) (article online)

16.) U. Zschieschang, R.T. Weitz, K. Kern and H. Klauk, “Bias Stress Effect in Low-voltage Organic Thin Film Transistors”, Appl. Phys. A 95, 139 (2009) (article online)


15.) R. Vogelgesang, J. Dorfmüller, R. Esteban, R.T. Weitz, A. Dmitriev, and K. Kern,
“Plasmonic Nanostructures in Aperture-less Scanning Near Field Optical Microscopy (aSNOM)”, phys. stat. sol (b) 245, 2255 (2008) (article online)

14.) A. Forment-Aliaga, R.T. Weitz, A.S. Sagar, E.J.H. Lee, M. Konuma, M. Burghard, and K. Kern, “Strong p-Type Doping of Individual Carbon Nanotubes by Prussian Blue Functionalization”, Small 10, 1671 (2008) (article online)

13.) R.T. Weitz, L. Harnau, S. Rauschenbach, M. Burghard, and K. Kern, “Polymer Nanofibers via Nozzle-Free Centrifugal Spinning”, Nano Letters 8, 1187 (2008) (article online)

12.) M. Häffner, A. Haug, R.T. Weitz, M. Fleischer, M. Burghard, H. Peisert, T. Chassé, and D.P. Kern, “E-beam Lithography of Catalyst Patterns for Carbon Nanotube Growth on Insulating Substrates”, Microelectronic Engineering 85, 768 (2008) (article online)

11.) K. Balasubramanian, E.J.H. Lee, R.T. Weitz, M. Burghard, and K. Kern, “Carbon Nanotube Transistors – Chemical Functionalization and Device Characterization”, phys. stat. sol. (a) 205, 633 (2008) (article online)

10.) E.J.H Lee, K. Balasubramanian, R.T. Weitz, M. Burghard, and K. Kern, “Contact and Edge Effects in Graphene Devices”, Nature Nanotechnology 3, 486 (2008) (article online)

9.) R.T. Weitz, K. Amsharov, U. Zschieschang, E. Barrena Villas, D.K. Goswami, M. Burghard, H. Dosch, M. Jansen, K. Kern, and H. Klauk, “Organic n-Channel Transistors Based on Core-Cyanated Perylene Carboxylic Diimide Derivatives”, J. Am. Chem. Soc. 130, 4637 (2008) (article online)


8.) C. Gómez-Navarro, R.T. Weitz, A.M. Bittner, M. Scolari, A. Mews, M. Burghard, and K. Kern, “Electronic Transport Properties of Individual Chemically Reduced Graphene Oxide Sheets”, Nano Letters 7, 3499 (2007) (article online)

7.) H. Klauk, U. Zschieschang, R.T. Weitz, H. Meng, F. Sun, G. Nunes, D.E. Keys, C.R. Fincher, and Z. Xiang, “Organic Transistors Based on Di(phenylvinyl)anthracene: Performance and Stability”, Advanced Materials 19, 3882 (2007) (article online)

6.) H. Klauk, U. Zschieschang, R.T. Weitz, H. Meng, F. Sun, D.E. Keys, and C.R. Fincher, “Low-Voltage Organic Thin-Film Transistors with Improved Stability and Large Transconductance”, DRC 2007 page 69, DOI: 10.1109/DRC.2007.4373654

5.) M. Burghard, K. Balasubramanian, T. Assmus, A. Forment-Aliaga, E.J.H. Lee, R.T. Weitz, M. Scolari, F. Nan, A. Mews, and K. Kern, “Electrochemically Modified Single-walled Carbon Nanotubes”, phys. stat. sol. (b) 244, 4021 (2007) (article online)

4.) R.T. Weitz, U. Zschieschang, F. Effenberger, H. Klauk, M. Burghard, and K. Kern, “High-performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer” Nano Letters 7, 22 (2007) (article online)

3.) R.T. Weitz, S. Rauschenbach, A. Forment-Aliaga, M. Burghard, and K. Kern, “Growth Mechanism of Solution-deposited Layers of the Charge-transfer Salt CuDDQ”, phys. stat. sol. (b) 244, 4346 (2007) (article online)


2.) R.T. Weitz, U. Zschieschang, H. Klauk, M. Burghard, and K. Kern, “Single-walled Carbon Nanotube Transistors on an Ultra-thin Gate Dielectric” phys. stat. sol. (b) 243, 3394 (2006) (article online)

1.) R.T. Weitz, A. Walter, R. Engl, R. Sezi, and C. Dehm, “New Charge-Transfer Salts for Reversible Resistive Memory Switching” Nano Letters 6, 2810 (2006) (article online)